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| 2N3439 2N3440 SILICON NPN TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439, 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P tot P tot T stg Tj Parameter 2N3439 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c 25 o C Total Dissipation at T amb 50 o C Storage Temperature Max. Operating Junction Temperature 450 350 7 1 0.5 10 1 -65 to 200 200 Value 2N3440 300 250 V V V A A W W o o Unit C C June 1997 1/4 2N3439 / 2N3440 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I CEX I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions for 2N3439 for 2N3440 for 2N3439 for 2N3440 for 2N3439 for 2N3440 V EB = 6 V I C = 50 mA for 2N3439 for 2N3440 I C = 50 mA I C = 50 mA I C = 20 mA I C = 2 mA I C = 5 mA I C = 5 mA IB = 4 mA I B = 4 mA V CE = 10 V V CE = 10 V for 2N3439 V CE = 10 V V CE = 10 V f = 1KHz f = 5MHz 40 30 25 15 MHz V CB = 360 V V CB = 250 V V CE = 300 V V CE = 200 V V CE = 450 V V CE = 300 V Min. Typ. Max. 20 20 20 50 500 500 20 Unit A A A A A A A V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) V BE(sat) h FE h FE fT Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Small Signal Current Gain Transition frequency 350 250 0.5 1.3 160 V V V V Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 2N3439 / 2N3440 TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch G I H D A L F E B P008B 3/4 2N3439 / 2N3440 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
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